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Type Designator: K2837
Type of Transistor: MOSFET
Hello friends, today in this video i have shown how to make a simple voltage regulator using a irfz44 mosfet. But remember to install good heat-sink for the.
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 271 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 24 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 90 nC
Rise Time (tr): 250 nS
Drain-Source Capacitance (Cd): 520 pF
Maximum Drain-Source On-State Resistance (Rds): 0.19 Ohm
Package: TO-247
K2837 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
K2837 Datasheet (PDF)
0.1. ttk2837.pdf Size:293K _1
TTK2837 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TTK2837 Switching Regulator Applications Unit: mm15.9 MAX. 3.2 0.2 Low drain-source on-resistance: RDS(ON) = 0.22 (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 10 A (VDS = 500 V) Enhancement mode: Vth = 1.5 to 3.0 V (VDS = 10 V,
0.2. 2sk2837.pdf Size:426K _toshiba
2SK2837 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2837 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 0.21 (typ.) (ON) High forward transfer admittance : |Y | = 17 S (typ.) fs Low leakage current : I = 100 A (max) (V = 500 V) DSS DSS Enhancement-mode : Vth = 2.0~4.0 V
0.3. k2837.pdf Size:498K _winsemi
K2837K2837K2837K2837Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 24A,500V,RDS(on)(Max0.19)@VGS=10V Ultra-low Gate charge(Typical 90nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis N-Channel enhancement mode power field ef
0.4. k2837b.pdf Size:572K _winsemi
K2837BK2837BK2837BK2837BSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures24A,500V,R (Max0.19)@V =10V DS(on) GS Ultra-low Gate charge(Typical 90nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis N-Channel enhancement mode power
Datasheet: CSD88539ND, CSD9024, K2611, K2611B, K2611S, K2611SB, K2698, K2698B, 2N3824, K2837B, KDB15N50, KDB2532, KDB2552, KDB2570, KDB2572, KDB2670, KDB3632.
Data Mosfet K2837
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Transistor Mosfet K2837
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