Mosfet K2837



The top countries of supplier is China, from which the percentage of transistor k2837 supply is 100% respectively. Related Search: transistor c2026 d718 transistor original original transistor k3569 transistors k3569 na transistor k3562 the original ic c4466 original sanyo d1047 transistor new original k176 j56 mosfet d313 k2545. K2837 datasheet, K2837 datasheets, K2837 pdf, K2837 circuit: WINSEMI - Silicon N-Channel MOSFET,alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, and other semiconductors.

Mosfet K2837

Type Designator: K2837

Type of Transistor: MOSFET

Hello friends, today in this video i have shown how to make a simple voltage regulator using a irfz44 mosfet. But remember to install good heat-sink for the.

Mosfet K2837

Type of Control Channel: N -Channel

K2837Mosfet K2837

Maximum Power Dissipation (Pd): 271 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 24 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 90 nC

Rise Time (tr): 250 nS

Drain-Source Capacitance (Cd): 520 pF

Maximum Drain-Source On-State Resistance (Rds): 0.19 Ohm

Package: TO-247

K2837 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

K2837 Datasheet (PDF)

0.1. ttk2837.pdf Size:293K _1

TTK2837 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TTK2837 Switching Regulator Applications Unit: mm15.9 MAX. 3.2 0.2 Low drain-source on-resistance: RDS(ON) = 0.22 (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 10 A (VDS = 500 V) Enhancement mode: Vth = 1.5 to 3.0 V (VDS = 10 V,

0.2. 2sk2837.pdf Size:426K _toshiba

2SK2837 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2837 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 0.21 (typ.) (ON) High forward transfer admittance : |Y | = 17 S (typ.) fs Low leakage current : I = 100 A (max) (V = 500 V) DSS DSS Enhancement-mode : Vth = 2.0~4.0 V

0.3. k2837.pdf Size:498K _winsemi

K2837K2837K2837K2837Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 24A,500V,RDS(on)(Max0.19)@VGS=10V Ultra-low Gate charge(Typical 90nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis N-Channel enhancement mode power field ef

0.4. k2837b.pdf Size:572K _winsemi

K2837BK2837BK2837BK2837BSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures24A,500V,R (Max0.19)@V =10V DS(on) GS Ultra-low Gate charge(Typical 90nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis N-Channel enhancement mode power

Datasheet: CSD88539ND, CSD9024, K2611, K2611B, K2611S, K2611SB, K2698, K2698B, 2N3824, K2837B, KDB15N50, KDB2532, KDB2552, KDB2570, KDB2572, KDB2670, KDB3632.



Data Mosfet K2837

Mosfet K2837


LIST

Transistor Mosfet K2837

Last Update

MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N02

Persamaan Mosfet K2837